elektronische bauelemente stt3458n 3.4a , 60v , r ds(on) 92 m ? n-channel enhancement mode mos.fet 14-mar-2012 rev. c page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. features ? low r ds(on) provides higher efficiency and extends battery life. ? low gate charge ? fast switch ? miniature tsop-6 surface mount package saves board space application power switch, power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellu lar and cordless telephones. package information package mpq leader size tsop-6 3k 7 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v t a = 25 c 3.4 continuous drain current 1 t a = 70 c i d 2.7 a pulsed drain current 2 i dm 20 a continuous source current (diode conduction) 1 i s 2.5 a t a = 25 c 2 power dissipation 1 t a = 70 c p d 1.3 w operating junction and st orage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings t Q 10 sec 62.5 maximum junction to ambient 1 steady state r ja 110 c / w notes 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e 1 23 4 5 6 d g d d d s
elektronische bauelemente stt3458n 3.4a , 60v , r ds(on) 92 m ? n-channel enhancement mode mos.fet 14-mar-2012 rev. c page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions gate-threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs = 20v - - 1 v ds =48v, v gs =0 zero gate voltage drain current i dss - - 25 a v ds =48v, v gs =0, t j = 55 c on-state drain current 1 i d(on) 10 - - a v ds =5v, v gs =10v - - 92 v gs =10v, i d =2.7a drain-source on-resistance 1 r ds(on) - - 107 m ? v gs =4.5v, i d =2.5a forward transconductance 1 g fs - 8 - s v ds =15v, i d =2.7a diode forward voltage v sd - 0.81 - v i s =1.3a, v gs =0 dynamic 2 input capacitance c iss - 297 - output capacitance c oss - 40 - reverse transfer capacitance c rss - 28 - pf v ds =15v, v gs =0, f=1mhz total gate charge q g - 4 - gate-source charge q gs - 1.2 - gate-drain charge q gd - 2.1 - nc v ds =30v, v gs =4.5v, i d =2.7a turn-on delay time t d(on) - 4 - rise time t r - 6 - turn-off delay time t d(off) - 17 - fall time t f - 5 - ns v ds =30v, v gen =10v, r l =11.2 ? , i d =2.7a, r gen =6 ? notes 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not s ubject to production testing.
elektronische bauelemente stt3458n 3.4a , 60v , r ds(on) 92 m ? n-channel enhancement mode mos.fet 14-mar-2012 rev. c page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente stt3458n 3.4a , 60v , r ds(on) 92 m ? n-channel enhancement mode mos.fet 14-mar-2012 rev. c page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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